Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials

Liquid-phase epitaxy connects crystal-growth theory with the materials behind semiconductor and optoelectronic devices. This edited technical volume moves from the principles and practical requirements of LPE to its use across an unusually broad range of materials, giving readers a field-spanning view of how the method works and where it has been applied.

From growth principles to working systems

The opening chapters introduce LPE growth modes and mechanisms, phase diagrams and modeling, and the equipment and instrumentation used in growth systems. Together, these subjects offer a framework for understanding how material, process conditions, and apparatus shape epitaxial layers.

A wide-ranging survey of materials

Subsequent chapters examine LPE of silicon, germanium and silicon-germanium, silicon carbide, gallium nitride, quantum wells and quantum dots, mercury cadmium telluride, wide-bandgap II–VI materials, and garnets. The volume also surveys specialized applications and developments, including a chapter on light-emitting diodes.

Where theory meets application

Across its chapters, the book relates crystal-growth methods to semiconductor, optical, and optoelectronic materials and devices. That breadth makes it useful for readers comparing how LPE has been applied across different material families, rather than studying one compound or device in isolation.

For postgraduate study and specialist reference

The book is primarily intended for postgraduate students building an understanding of liquid-phase epitaxy, and it also serves researchers and industry specialists looking for a broad technical reference. Its mix of fundamentals, historical context, process considerations, and material-specific coverage makes it a substantial resource for advanced study of crystal growth and semiconductor materials.